Ab initio calculations of the electronic structure of silicon nanocrystals doped with shallow donors (Li, P)

被引:0
|
作者
N. V. Kurova
V. A. Burdov
机构
[1] Lobachevskii Nizhni Novgorod State University,
来源
Semiconductors | 2013年 / 47卷
关键词
Lithium Atom; Bulk Silicon; Silicon Nanocrystals; Nanocrystal Size; Tetrahedral Interstice;
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学科分类号
摘要
The results of ab initio calculations of the electronic structure of Si nanocrystals doped with shallow donors (Li, P) are reported. It is shown that phosphorus introduces much more significant distortions into the electronic structure of the nanocrystal than lithium, which is due to the stronger central cell potential of the phosphorus ion. It is found that the Li-induced splitting of the ground state in the conduction band of the nanocrystal into the singlet, doublet, and triplet retains its inverse structure typical for bulk silicon.
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页码:1578 / 1582
页数:4
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