The generation-recombination current through a contact of metal with amorphous silicon under the conditions of thermal field ionization in a space-charge region

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作者：

P. N. Krylov

机构：

[1] Udmurt State University,

来源：

Semiconductors | 2000年 / 34卷

关键词：

Silicon; Magnetic Material; Electromagnetism; Amorphous Silicon; Thermal Field;

D O I：

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学科分类号：

摘要：

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页码：305 / 307

页数：2

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[1] The generation-recombination current through a contact of metal with amorphous silicon under the conditions of thermal field ionization in a space-charge region
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