The generation-recombination current through a contact of metal with amorphous silicon under the conditions of thermal field ionization in a space-charge region

被引：0

作者：

Krylov, PN ^{[1
]}

机构：

[1] Udmurt State Univ, Izhevsk 426034, Russia

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 03期

关键词：

Silicon; Magnetic Material; Electromagnetism; Amorphous Silicon; Thermal Field;

D O I：

10.1134/1.1187976

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

[No abstract available]

引用

页码：305 / 307

页数：3

共 16 条

[1] The generation-recombination current through a contact of metal with amorphous silicon under the conditions of thermal field ionization in a space-charge region
P. N. Krylov
Semiconductors, 2000, 34 : 305 - 307
[2] CARRIER GENERATION-RECOMBINATION IN SPACE-CHARGE REGION OF A P-N-JUNCTION
BRANCUS, D
DOLOCAN, V
INTERNATIONAL JOURNAL OF ELECTRONICS, 1972, 32 (02) : 137 - +
[3] NOISE AND ADMITTANCE OF GENERATION-RECOMBINATION CURRENT INVOLVING SRH CENTERS IN SPACE-CHARGE REGION OF JUNCTION DEVICES
VANVLIET, KM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (11) : 1236 - 1246
[4] CARRIER GENERATION-RECOMBINATION IN SPACE-CHARGE REGION OF AN ASYMMETRICAL P-N JUNCTION
CHOO, SC
SOLID-STATE ELECTRONICS, 1968, 11 (11) : 1069 - +
[5] ALLOWANCE FOR TUNNELING THROUGH THE SPACE-CHARGE REGION IN A METAL-AMORPHOUS SILICON JUNCTION
STRIKHA, VI
ILCHENKO, VV
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1986, 29 (11): : 3 - 7
[6] RECOMBINATION RADIATION IN THE SPACE-CHARGE REGION OF THE METAL-CDS CONTACT
KABANOVA, IS
KOSYACHENKO, LA
MAKHNY, VP
UKRAINSKII FIZICHESKII ZHURNAL, 1985, 30 (06): : 865 - 868
[7] Comparison of main models for generation-recombination space-charge current in abrupt p-n junction
Gaci, A
Maxim, A
Ahmadpanah, M
Andreu, D
Boucher, J
1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2, 1997, : 253 - 256
[8] PHYSICAL INTERPRETATION OF NOISE-REDUCTION FOR GENERATION-RECOMBINATION CURRENT DUE TO SRH CENTERS IN SPACE-CHARGE LAYER
VANVLIET, KM
VANDERZIEL, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) : 1127 - 1129
[9] Space-charge generation-recombination current in an abrupt P-N junction subjected to small bias voltage
Gaci, A
Raiff, B
Ahmadpanah, M
Boucher, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (01) : 331 - 334
[10] MEASUREMENT OF SPACE-CHARGE GENERATION-RECOMBINATION CURRENT IN HG1-XCDXTE PHOTO-DIODES BY DEEP LEVEL TRANSIENT SPECTROSCOPY
POLLA, DL
REINE, MB
SOOD, AK
LOVECCHIO, P
JONES, CE
SCOTT, MW
SOLID-STATE ELECTRONICS, 1981, 24 (08) : 719 - 723

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