Undoped tin oxide thin films obtained by the sol gel technique, starting from a simple precursor solution

被引:0
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作者
D. Y. Torres Martínez
R. Castanedo Pérez
G. Torres Delgado
O. Zelaya Angel
机构
[1] Unidad Querétaro,Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional
[2] Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional,Departamento de Física
关键词
SnO2; In2O3; Precursor Solution; Stannous Chloride; Oxygen Vacancy Concentration;
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摘要
In this work, we report the synthesis and the structural, optical and electrical properties of undoped tin oxide thin films obtained by the sol–gel technique. The films have been prepared from a simpler precursor solution than other ones reported; it is based on stannous chloride (SnCl2·2H2O), ethanol, glycerol and triethylamine. The films are deposited on glass slide substrates and sintered at temperatures in the 300–550 °C range, in an open atmosphere. A second thermal treatment in vacuum is made in order to decrease the resistivity of the films. The X-ray diffraction patterns show the tetragonal phase of SnO2 with a small preferential orientation in the (110) plane. All films show high optical transmission (~85%) and a direct band gap value around of 3.8 eV. The minimum resistivity value, 2 × 10−1 Ohm-cm, is obtained for the films sintered at 300 and 350 °C and thermal treated in vacuum at 500 °C for 1 h. The decrease of the resistivity with the thermal treatment in vacuum is associated with an increase in the oxygen vacancies concentration.
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页码:684 / 689
页数:5
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