Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons

被引：0
|
作者：
O. M. Korolkov
V. V. Kozlovski
A. A. Lebedev
N. Sleptsuk
J. Toompuu
T. Rang
机构：
[1] Tallinn University of Technology,
[2] Peter the Great St. Petersburg Polytechnic University,undefined
[3] Ioffe Institute,undefined
来源：
Semiconductors | 2019年 / 53卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：975 / 978
页数：3
相关论文
共 50 条
  • [21] High-temperature post-oxidation annealing on the low-temperature oxide/4H-SiC(0001)
    Kosugi, R
    Cho, WJ
    Fukuda, K
    Arai, K
    Suzuki, S
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) : 1314 - 1317
  • [22] Annealing Characteristics of p+-Si/n-4H-SiC Junctions by Using Surface-Activated Bonding
    Nishida, S.
    Liang, J.
    Hayashi, T.
    Morimoto, M.
    Shigekawa, N.
    Arai, M.
    2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2014, : 54 - 54
  • [23] Low temperature annealing of optical centres in 4H SiC
    Steeds, JW
    Furkert, S
    Hayes, JM
    Sullivan, W
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 637 - 640
  • [24] The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer
    Lapa, Havva Elif
    Kokce, Ali
    Aldemir, Durmus Ali
    ozdemir, Ahmet Faruk
    Altindal, Semsettin
    PHYSICA SCRIPTA, 2020, 95 (11)
  • [25] Low-temperature annealing of ion-doped layers of silicon in hydrogen atom flow
    Kagadei, V.
    Nefyodtsev, E.
    Romanenko, S.
    MICRO- AND NANOELECTRONICS 2005, 2006, 6260
  • [26] Annealing characteristics of p+-Si/n-4H-SiC junctions by using surface-activated bonding
    20143818167122
    (1) Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585, Japan; (2) New Japan Radio Co. Ltd., 3-10 Nihonbasi Yokoyama, Chuo-ku, Tokyo 103-8456, Japan, 1600, Technology Society; The IEEE Components, Packaging, and Manufacturing (IEEE Computer Society):
  • [27] Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors
    Hallen, Anders
    Nawaz, Muhammad
    Zaring, Carina
    Usman, Muhammad
    Domeij, Martin
    Ostling, Mikael
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (07) : 707 - 709
  • [28] Low-temperature activation of ion-implanted dopants in 4H-SiC by excimer laser annealing
    Tanaka, Y
    Tanoue, H
    Arai, K
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 799 - 802
  • [29] Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range
    Gora, V. E.
    Auret, F. D.
    Danga, H. T.
    Tunhuma, S. M.
    Nyamhere, C.
    Igumbor, E.
    Chawanda, A.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2019, 247
  • [30] Recovery at room temperature annealing on 4H-SiC SBDs by gamma irradiation
    Li, Yun
    Gong, Min
    Huang, Mingmin
    Ma, Yao
    Yang, Zhimei
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 176
12345