Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons

被引：0
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作者：
O. M. Korolkov
V. V. Kozlovski
A. A. Lebedev
N. Sleptsuk
J. Toompuu
T. Rang
机构：
[1] Tallinn University of Technology,
[2] Peter the Great St. Petersburg Polytechnic University,undefined
[3] Ioffe Institute,undefined
来源：
Semiconductors | 2019年 / 53卷
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页码：975 / 978
页数：3
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