High H-atom Density in R(He,Ar)/x%(N2–5%H2) Early Afterglows

被引:0
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作者
André Ricard
Jayr Amorim
Mustapha Abdeladim
Jean- Philippe Sarrette
机构
[1] Univ. Toulouse,LAPLACE
[2] CNRS,Dept. Fisica
[3] INPT,undefined
[4] UPS,undefined
[5] Inst. Tec. Aeronautica,undefined
[6] CTA,undefined
[7] LMSE,undefined
[8] Fac. Génie Electrique,undefined
[9] USTO,undefined
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关键词
R(He,Ar)/N; /H; afterglows; Band intensity ratio method; N and H atoms densities; γ Wall destruction probability of H-atoms on quartz walls;
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摘要
Absolute densities of N atoms and N2(A) molecules and estimated densities of H atoms and N2(X,v > 13) and NH molecules are determined in R(He,Ar)/x%(N2–5%H2) flowing microwave discharges by a band intensity ratio method after calibration of the N atom density by NO titration. By varying the plasma parameters: pressure of 8 and 4 Torr, flow rates of 0.5, 1.0 and 2.0 slpm, HF power up to 150 W, a high N + N recombination fraction (> 80%) has been observed with He dilution in the early afterglow (t = 5 × 10–3 s). A maximum value of the H-atom density has been found in the He/2%(N2–5%H2) gas mixture at 8 Torr, 0.5 slpm and 150 W, with a [H]/[N] ratio of 0.3. With Ar dilution, it is found that the Ar/5%(N2–5%H2) gas mixture at 4 Torr, 0.5 slpm, 100 W brought a high H2 dissociation (80%), with a [H]/[N] ratio of about 0.6. From the variation of the H-atom density along the quartz tube, the wall destruction probability of the H-atoms was calculated to be γHHe\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\gamma }_{H}^{He}$$\end{document} = γHAr\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\gamma }_{H}^{Ar}$$\end{document}  = (1–4) × 10–3 in helium and argon mixtures. Such results are of interest for the enhancement of surface nitriding by the combined effects of N and H atoms inclusion inside a TiO2 surface.
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页码:1351 / 1363
页数:12
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