Excimer laser-induced microstructural changes of alumina and silicon carbide

被引:0
|
作者
D. Sciti
C. Melandri
A. Bellosi
机构
[1] CNR-IRTEC,Research Institute for Ceramics Technology
[2] CNR-IRTEC,Research Institute for Ceramics Technology
来源
关键词
Carbide; Laser Pulse; Silicon Carbide; Material Removal; Ceramic Material;
D O I
暂无
中图分类号
学科分类号
摘要
Surface treatments with a KrF excimer laser were applied on alumina and silicon carbide ceramic materials. Results on the surface modifications induced by laser were related to the processing parameters: laser fluence (1.8 and 7.5 J/cm2), number of laser pulses (1 to 500), frequency (1 to 120 Hz), pulse duration (25 ns), sample speed under the laser beam and working atmosphere. It was ascertained that alumina can be laser treated under air, while silicon carbide needs an inert atmosphere to avoid surface oxidation. Microstructural analyses of surface and cross section of the laser processed samples evidenced that at low fluence (1.8 J/cm2) the surface of both ceramics is covered by a scale due to melting/resolidification. At high fluence (7.5 J/cm2) there are no continuous scales on the surfaces; material is removed by decomposition/vaporisation and the depth of material removal is linearly dependent on the number of pulses. On alumina surface, a network of microcracks formed, while on silicon carbide different morphologies (flat and rugged areas, deposits of debris and discontinuous thin remelted scales) were detected. The evolution of surface morphology and roughness is discussed with reference to composition, microstructure and physical and optical properties of the two tested ceramics and to laser processing parameters.
引用
收藏
页码:3799 / 3810
页数:11
相关论文
共 50 条
  • [1] Excimer laser-induced microstructural changes of alumina and silicon carbide
    Sciti, D
    Melandri, C
    Bellosi, A
    [J]. JOURNAL OF MATERIALS SCIENCE, 2000, 35 (15) : 3799 - 3810
  • [2] EXCIMER LASER-INDUCED ETCHING OF SILICON-CARBIDE
    MURAHARA, M
    ARAI, H
    MATSUMURA, T
    [J]. LASER- AND PARTICLE-BEAM CHEMICAL PROCESSES ON SURFACES, 1989, 129 : 315 - 319
  • [3] Excimer laser-induced hydrodynamical effects and surface modifications on silicon carbide
    Nicolas, G
    Autric, M
    [J]. APPLIED SURFACE SCIENCE, 1996, 96-8 : 296 - 301
  • [4] EXCIMER LASER-INDUCED DOPING OF CRYSTALLINE SILICON-CARBIDE FILMS
    KRISHNAN, S
    DCOUTO, GC
    CHAUDHRY, MI
    BABU, SV
    [J]. JOURNAL OF MATERIALS RESEARCH, 1995, 10 (11) : 2723 - 2727
  • [5] EXCIMER LASER-INDUCED DEPOSITION OF TUNGSTEN ON SILICON
    VANMAAREN, AJP
    KRANS, RL
    DEHAAS, E
    SINKE, WC
    [J]. APPLIED SURFACE SCIENCE, 1989, 38 (1-4) : 386 - 396
  • [6] EXCIMER LASER-INDUCED DOPING OF PHOSPHORUS INTO SILICON
    SLAOUI, A
    FOULON, F
    SIFFERT, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (10) : 6197 - 6201
  • [7] Excimer laser-induced damage in bilayer carbide/polyimide systems
    Danev, G
    Spassova, E
    Petkov, K
    Tomov, RI
    Popova, K
    Atanasov, PA
    Ihlemann, J
    [J]. ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS, 1999, 9 (06): : 227 - 234
  • [8] Laser-induced phase separation of silicon carbide
    Choi, Insung
    Jeong, Hu Young
    Shin, Hyeyoung
    Kang, Gyeongwon
    Byun, Myunghwan
    Kim, Hyungjun
    Chitu, Adrian M.
    Im, James S.
    Ruoff, Rodney S.
    Choi, Sung-Yool
    Lee, Keon Jae
    [J]. NATURE COMMUNICATIONS, 2016, 7
  • [9] Laser-induced phase separation of silicon carbide
    Insung Choi
    Hu Young Jeong
    Hyeyoung Shin
    Gyeongwon Kang
    Myunghwan Byun
    Hyungjun Kim
    Adrian M. Chitu
    James S. Im
    Rodney S. Ruoff
    Sung-Yool Choi
    Keon Jae Lee
    [J]. Nature Communications, 7
  • [10] Laser-induced surface drilling of silicon carbide
    Sciti, D
    Bellosi, A
    [J]. APPLIED SURFACE SCIENCE, 2001, 180 (1-2) : 92 - 101