Dislocation behavior in highly impurity-doped Si

The dynamic behavior of dislocations in highly impurity-doped Si crystals is investigated. Suppression of the generation of dislocations from a surface scratch is found for Si doped with B and P with a concentration higher than 1×1019cm-3 and the critical stress for dislocation generation increases with B and P concentration which is interpreted in terms of dislocation locking due to impurity segregation. The velocity of dislocations in B- and P-doped crystals increases with increasing B and P concentration, respectively.