Dislocation behavior in highly impurity-doped Si

被引：0
|
作者：
I. Yonenaga
机构：
[1] Tohoku University,Institute for Materials Research
来源：
Journal of Materials Science: Materials in Electronics | 2001年 / 12卷
关键词：
Electronic Material; Dynamic Behavior; Critical Stress; Dislocation Behavior; Generation Increase;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The dynamic behavior of dislocations in highly impurity-doped Si crystals is investigated. Suppression of the generation of dislocations from a surface scratch is found for Si doped with B and P with a concentration higher than 1×1019cm-3 and the critical stress for dislocation generation increases with B and P concentration which is interpreted in terms of dislocation locking due to impurity segregation. The velocity of dislocations in B- and P-doped crystals increases with increasing B and P concentration, respectively.
引用
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页码：285 / 288
页数：3
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