Fabrication and characterization of epitaxial ferrimagnetic Mn3Ga thin films with perpendicular magnetic anisotropy

Ferrimagnetic materials have recently been highly focused in the area of spintronics. In this work, epitaxial single-crystal ferrimagnetic Mn3Ga thin films with perpendicular magnetic anisotropy were fabricated by optimizing the sputtering growth temperature. The exchange coupling to a soft ferromagnetic CoFe layer, anisotropic magnetoresistance, the anomalous Hall effect, and the effect of measuring current on the zero-field anomalous Hall resistance were investigated. An anomalous anisotropic magnetoresistance was observed for this perpendicular magnetized material, which may provide evidence for the recently predicted Weyl points in ferrimagnetic Mn3Ga. In addition, this work may pave the way to current-induced magnetization switching assisted by Weyl-points-generated Berry curvature in a single ferrimagnetic layer under zero magnetic field.