Dielectric Losses and Charge Transfer in Antimony-Doped TlGaS2 Single Crystal

被引：0
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作者：
S. M. Asadov
S. N. Mustafaeva
机构：
[1] Azerbaijan National Academy of Sciences,Institute of Catalysis and Inorganic Chemistry named after Academician M. Nagiyev
[2] Institute of Physics,undefined
[3] Azerbaijan National Academy of Sciences,undefined
来源：
Physics of the Solid State | 2018年 / 60卷
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摘要：
Effect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS2-based single crystals grown by the Bridgman–Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa0.995Sb0.005S2 single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS2 single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.
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页码：499 / 503
页数：4
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