Design of an InGaAs/InP 1.55 μm electrically pumped VCSEL

被引：0

作者：

J.-M. Lamy

S. Boyer-Richard

C. Levallois

C. Paranthoën

H. Folliot

N. Chevalier

A. Le Corre

S. Loualiche

机构：

[1] Université Européenne de Bretagne,

[2] INSA-FOTON UMR CNRS 6082,undefined

来源：

Optical and Quantum Electronics | 2008年 / 40卷

关键词：

Electrically pumped VCSEL; Tunnel junction; 1.55 μm; DBR;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The design of an electrically pumped InGaAs quantum well based vertical cavity surface emitting laser (VCSEL) on InP substrate is presented. Such optically pumped VCSELs have already been demonstrated. To design electrically pumped VCSEL, three simulations steps are needed: optical simulation gives access to the standing-wave electric field distribution, to design the active region and the Bragg mirrors. Thermal simulation is helpful to design metallic contacts while the energy band diagram is obtained by electrical simulation to design the buried tunnel junction useful for carrier injection. All these simulations are compared to experiment.

引用

页码：1193 / 1198

页数：5

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