Study of the 3C-SiC layers grown on the 15R-SiC substrates

被引：0
|
作者：
A. A. Lebedev
P. L. Abramov
E. V. Bogdanova
A. S. Zubrilov
S. P. Lebedev
D. K. Nelson
N. V. Seredova
A. N. Smirnov
A. S. Tregubova
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2009年 / 43卷
关键词：
61.66.Fn; 61.72.Mm; 68.55.Jk; 73.61.Le; 78.30.Hv;
D O I：
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中图分类号：
学科分类号：
摘要：
The 3C-SiC layers grown on the 15R-SiC substrates by sublimation epitaxy in vacuum are studied. Using X-ray topography and Raman spectroscopy, it is shown that the obtained layers are of a rather high structural quality. By the data of the Raman spectroscopy and capacitance-voltage measurements, it is established that the electron concentration in the 3C-SiC layer is (4–6) × 1018 cm−3.
引用
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页码：756 / 759
页数：3
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