The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency

被引：0
|
作者：
Chen-Chen Chung
Binh Tinh Tran
Hau-Vei Han
Yen-Teng Ho
Hung-Wei Yu
Kung-Liang Lin
Hong-Quan Nguyen
Peichen Yu
Hao-Chung Kuo
Edward Yi Chang
机构：
[1] National Chiao Tung University,Department of Materials and Engineering
[2] National Chiao-Tung University,Department of Photonics and Institute of Electro
来源：
Electronic Materials Letters | 2014年 / 10卷
关键词：
CdS; quantum dots; triple-junction solar cell;
D O I：
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中图分类号：
学科分类号：
摘要：
This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) fabricated by a novel chemical solution. With the anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency more than that of a traditional GaAs-based device. Experimental results indicate that CdS quantum dot can enhance the short-circuit current by 0.33 mA/cm2, which is observed for the triple-junction solar cells with CdS QDs of about 3.5 nm in diameter. Moreover, the solar cell conversion efficiency is improved from 28.3% to 29.0% under one-sun AM 1.5 global illumination I–V measurement.
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页码：457 / 460
页数：3
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