On the optimization of InGaP/GaAs/InGaAs triple-junction solar cell

This paper presents an optimization procedure for the design parameters of InGaP/GaAs/InGaAs Triple-Junction (TJ) solar cell by using SILVACO TCAD. The solar cell design parameters include layers' materials, thicknesses and doping concentrations. Firstly, the optimization technique is performed on an InGaP/GaAs/Ge cell. The Ge sub-cell is then replaced by an InGaAs sub-cell. A comparison between the performance parameters of InGaP/GaAs/InGaAs and InGaP/GaAs/Ge TJ solar cells is investigated. The compared parameters are the open circuit voltage (V-OC), short circuit current density (J(SC)), Fill Factor (FF) and the conversion efficiency (eta). Finally, a comparison between these optimized devices against some previously published work is presented. All simulations for triple-junction solar cells are accomplished under light intensity of 1-sun of standard AM1.5G solar spectrum at 300 K. The electrical characteristics for the proposed TJ solar cell are V-OC = 2.9 V and J(SC) = 15.97 mA/cm(2) with conversion efficiency = 42.01%.