Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

被引：0
|
作者：
N. V. Dikareva
B. N. Zvonkov
O. V. Vikhrova
S. M. Nekorkin
V. Ya. Aleshkin
A. A. Dubinov
机构：
[1] Nizhny Novgorod State University,Physical–Technical Research Institute
[2] Russian Academy of Sciences,Institute of Physics of Microstructures
来源：
Semiconductors | 2017年 / 51卷
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摘要：
The results of investigation of a metal-organic-vapor-phase-epitaxy-grown GaAsSb/GaAs/InGaP laser structure are presented. Steady two-band generation caused by spatially direct and indirect optical transitions is obtained. Observation of the sum frequency shows the effective intracavity mixing of modes in semiconductor lasers of such a type.
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页码：1360 / 1363
页数：3
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