Rapid and quantitative analysis of impurities in silicon powders by glow discharge mass spectrometry

被引:0
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作者
Jianying Zhang
Tao Zhou
Yichuan Tang
Yanjie Cui
Dan Song
机构
[1] National Institute of Metrology,
来源
关键词
Glow discharge mass spectrometry; Quantitative analysis; Impurities; Matrix effect; Relative sensitivity factors; Silicon powders;
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学科分类号
摘要
High-purity silicon power was doped with standard solutions containing 15 elements, and a high-purity indium tablet was prepared by the melting of indium pellets. An In–Si tablet, which is mechanically stable and thus suitable as a calibration sample, was prepared by our pressing the doped silicon power on the high-purity indium tablet. The matrix effect was studied by our investigating the variations of measured mass fractions (standard relative sensitivity factor, StdRSF, calibration) of doped impurities in the In–Si tablet, which provides a series of matrixes with different mass ratios of In to Si. For all the elements, the relative standard deviations of the measured mass fractions of impurities were less than 30%. The RSFs of the glow discharge mass spectrometer (Element GD) were obtained, and the results showed that three RSFs derived from the In–Si tablet with low, intermediate and high mass ratios of In to Si, respectively, agreed with the mean RSF within an uncertainty interval of 30%. The measurement of Fe and Al matrix certified reference materials further demonstrated that the RSFs generated from a matrix can be used for the calibration of another matrix, and the uncertainty was within 30%. Finally, another doped silicon powder was measured with the glow discharge mass spectrometer, which was calibrated by the mean RSFs from the In–Si tablet, and the analytical results obtained by glow discharge mass spectrometry are in good agreement with the analytical results obtained by high-resolution inductively coupled plasma mass spectrometry.
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页码:7195 / 7201
页数:6
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