Spin-orbit torque switching of an antiferromagnetic metallic heterostructure

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作者
Samik DuttaGupta
A. Kurenkov
Oleg A. Tretiakov
G. Krishnaswamy
G. Sala
V. Krizakova
F. Maccherozzi
S. S. Dhesi
P. Gambardella
S. Fukami
H. Ohno
机构
[1] Tohoku University,Center for Science and Innovation in Spintronics
[2] Tohoku University,Center for Spintronics Research Network
[3] Tohoku University,Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication
[4] The University of New South Wales,School of Physics
[5] ETH Zurich,Laboratory for Magnetism and Interface Physics, Department of Materials
[6] Diamond Light Source,Center for Innovative Integrated Electronic Systems
[7] Chilton,WPI Advanced Institute for Materials Research
[8] Tohoku University,undefined
[9] Tohoku University,undefined
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摘要
The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of antiferromagnetic materials with biaxial magnetic anisotropy for electrical manipulation. A practical realization of these antiferromagnetic devices is limited by the requirement of material-specific constraints. Here, we demonstrate current-induced switching in a polycrystalline PtMn/Pt metallic heterostructure. A comparison of electrical transport measurements in PtMn with and without the Pt layer, corroborated by x-ray imaging, reveals reversible switching of the thermally-stable antiferromagnetic Néel vector by spin-orbit torques. The presented results demonstrate the potential of polycrystalline metals for antiferromagnetic spintronics.
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