Pure anomalous Hall effect in nonmagnetic zinc-blende semiconductors

被引:0
|
作者
M. Idrish Miah
机构
[1] Griffith University,Nanoscale Science and Technology Centre
[2] Griffith University,School of Biomolecular and Physical Sciences
[3] University of Chittagong,Department of Physics
来源
关键词
Semiconductors; Hall effect; Polarized light;
D O I
暂无
中图分类号
学科分类号
摘要
We report the experimental observation of the pure anomalous Hall effect (AHE) in nonmagnetic zinc-blende semiconductors without application of the external magnetic fields. The AHE without any contribution from the ordinary Hall current originates from nonequilibrium magnetization induced by spin-polarized electrons generated by the circularly polarized light (σ). We measure the pure AHE as a function of the external bias, crystal temperature and pumping σ-photon energy. The results of their dependences are discussed.
引用
收藏
页码:1033 / 1042
页数:9
相关论文
共 50 条
  • [21] DIELECTRIC FUNCTION OF HOLES IN SEMICONDUCTORS OF ZINC-BLENDE STRUCTURE.
    Bardyszewski, W.
    1600,
  • [22] Spin trajectory along an evanescent loop in zinc-blende semiconductors
    Nguyen, T. L. Hoai
    Drouhin, Henri-Jean
    Fishman, Guy
    PHYSICAL REVIEW B, 2009, 80 (07)
  • [23] Large intrinsic birefringence in zinc-blende based artificial semiconductors
    Jancu, Jean-Marc
    Harmand, Jean-Christophe
    Patriarche, Gilles
    Talneau, Anne
    Meunier, Karine
    Glas, Frank
    Voisin, Paul
    COMPTES RENDUS PHYSIQUE, 2007, 8 (10) : 1174 - 1183
  • [24] Sum frequency generation in pure zinc-blende GaAs nanowires
    Zhang, Xiaoqing
    He, Hao
    Fan, Jintao
    Gu, Chenglin
    Yan, Xin
    Hu, Minglie
    Zhang, Xia
    Ren, Xiaomin
    Wang, Chingyue
    OPTICS EXPRESS, 2013, 21 (23): : 28432 - 28437
  • [25] Nontrivial topological valence bands of common diamond and zinc-blende semiconductors
    Rauch, Tomas
    Rogalev, Victor A.
    Bauernfeind, Maximilian
    Maklar, Julian
    Reis, Felix
    Adler, Florian
    Moser, Simon
    Weis, Johannes
    Lee, Tien-Lin
    Thakur, Pardeep K.
    Schaefer, Joerg
    Claessen, Ralph
    Henk, Juergen
    Mertig, Ingrid
    PHYSICAL REVIEW MATERIALS, 2019, 3 (06)
  • [26] Circularly polarized light stimulation of spin transport in zinc-blende semiconductors
    Miah, M. Idrish
    Kityk, I. V.
    Gray, E. MacA.
    OPTICS COMMUNICATIONS, 2008, 281 (21) : 5355 - 5359
  • [27] Spectral behavior of three-photon absorption in zinc-blende semiconductors
    Cirloganu, Claudiu M.
    Olszak, Peter D.
    Padilha, Lazaro A.
    Webster, Scott
    Hagan, David J.
    Van Stryland, Eric W.
    2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 296 - 297
  • [28] Importance of second-order piezoelectric effects in zinc-blende semiconductors
    Bester, Gabriel
    Wu, Xifan
    Vanderbilt, David
    Zunger, Alex
    PHYSICAL REVIEW LETTERS, 2006, 96 (18)
  • [29] Fermi level pinning for zinc-blende semiconductors explained with interface bonds
    Tung, Raymond T.
    Kronik, Leeor
    PHYSICAL REVIEW B, 2021, 103 (08)
  • [30] Estimation of the cleavage force of crystalline semiconductors with diamond and zinc-blende structure
    Popov, VN
    March, NH
    Van Doren, VE
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (01) : 159 - 160