Effect of external actions on characteristics of gallium arsenide Schottky-barrier diode structures

被引：0
|
作者：
A. B. Kamalov
机构：
[1] Integrated Institute of Natural Sciences KKO AN RUz,
来源：
Radioelectronics and Communications Systems | 2008年 / 51卷 / 2期
关键词：
GaAs; Schottky Barrier; External Action; Gallium Arsenide; Diode Structure;
D O I：
10.3103/S0735272708020040
中图分类号：
学科分类号：
摘要：
In this paper we analyze briefly literary information about an effect of external actions on electrophysical characteristics of gallium arsenide Schottky-barrier diode structures and their stability to external influences. We discussed radiation changes of gallium arsenide Schottky-barrier diode structures, and also we discuss effects of small radiation dose treatment.
引用
收藏
页码：80 / 86
页数：6
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