Gate-all-around nanosheet transistors go 2D

被引：0
|
作者：
Zhihong Chen
机构：
[1] Purdue University,Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center
来源：
Nature Electronics | 2022年 / 5卷
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D O I：
暂无
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学科分类号：
摘要：
Two-dimensional semiconductors can be used as a channel material in gate-all-around nanosheet field-effect transistors.
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页码：830 / 831
页数：1
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