The reaction between a TiNi shape memory thin film and silicon

被引：0
|
作者：
Susanne Stemmer
Gerd Duscher
Christina Scheu
Arthur H. Heuer
Manfred Rühle
机构：
[1] Case Western Reserve University,Department of Materials Science and Engineering
[2] Institut für Werkstoffwissenschaft,Max
[3] Katholieke Universiteit Leuven,Planck
来源：
Journal of Materials Research | 1997年 / 12卷
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学科分类号：
摘要：
The reaction between shape-memory TiNi thin films and silicon has been characterized by conventional, analytical, and high-resolution transmission electron microscopy. A reaction layer is formed during the 525 °C post-deposition crystallization anneal of the sputter-deposited TiNi, and consists of several phases: Ti2Ni, a nickel silicide, and a ternary titanium nickel silicide. The mechanism for the interlayer formation is discussed.
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页码：1734 / 1740
页数：6
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