Temperature characteristics of InGaAs/GaAs vertical cavity surface emitting laser

被引：0
|
作者：
Hong-wei Qu
Xia Guo
Li-min Dong
Hong-hang Wang
Jun Deng
Peng Lian
De-shu Zhou
Guang-di Shen
机构：
[1] Beijing University of Technology,School of Electronic Information & Control Engineering and Beijing Optoelectronic Technology Laboratory
来源：
Optoelectronics Letters | 2005年 / 1卷 / 1期
关键词：
TN248. 4; A;
D O I：
10.1007/BF03033613
中图分类号：
学科分类号：
摘要：
The temperature characteristics for the different lasing modes at 300 K of intracavity contacted InGaAs/GaAs Vertical Cavity Surface Emitting Lasers (VCSELs) have been investigated experimentally by using the SV-32 cryostat and LD2002C5 test system. In combination with the simulation results of the reflective spectrum and the gain peak at different temperatures, the measurement results have been analyzed. In addition, the dependence of device size on temperature characteristics is discussed. The experimental data can be used to optimally design of VCSEL at high or cryogenic temperature.
引用
收藏
页码：40 / 43
页数：3
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