Improvement in dielectric and ferroelectric property of dysprosium doped barium bismuth titanate ceramic

被引:0
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作者
T. Badapanda
R. Harichandan
T. Bheesma Kumar
S. Parida
S. S. Rajput
P. Mohapatra
S. Anwar
R. Ranjan
机构
[1] C.V. Raman College of Engineering,Department of Physics
[2] Centurion University of Technology and Management,Department of Physics
[3] Indian Institute of Technology,Department of Materials Science and Engineering
[4] C.V. Raman College of Engineering,Department of Chemistry
[5] Institute of Minerals and Materials Technology,Colloids and Materials Chemistry
[6] Indian Institute of Science,Department of Materials Engineering
关键词
Perovskite; Oxygen Vacancy; BiFeO3; Dysprosium; Diffuse Phase Transition;
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摘要
The dysprosium doped barium bismuth titanate ceramic with general formula BaBi4−xDyxTi4O15 (BBDT) were prepared by solid-state reaction process. The effect Dy3+ on Bi3+ sites on the structural, microstructure, dielectric, conductivity and ferroelectric behaviour of BaBi4Ti4O15 ceramics were investigated. X-ray diffraction and Raman analysis confirmed the above compositions to be monophasic with orthorhombic structure and belonged to the m = 4 member of the Aurivillius family of oxides. The SEM micrographs show well define grains in all ceramics. From the dielectric behavior as a function of temperature it was observed that the maximum dielectric constant decreases and transition temperature increases with an increase in Dy content. The diffuse nature of the dielectric behavior of BBDT ceramics obtained from the modified Curie–Weiss law and it was attributed to the A site cationic disorder. The frequency dependence AC conductivity obeys the power law and the DC conductivity shows a thermally activated process. Ativation energies were obtained from the Arrhenius law and it is observed that oxygen vacancy (VO··\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{V}}_{\text{O}}^{ \cdot \cdot }$$\end{document}) are mainly responsible for the conduction mechanism in the systems. The ferroelectric properties were studied by P–E hysteresis loop and it observed that the remnant polarization increases with Dy doping.
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页码:7211 / 7221
页数:10
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