Effect of Ce Substitution on the Properties of Tl-Based Superconductors

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作者
N. M. Hamdan
机构
[1] King Fahd University of Petroleum and Minerals,Physics Department
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Transition Temperature; Charge Carrier; Carrier Concentration; Nominal Composition; Hole Concentration;
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摘要
Samples with nominal composition (Tl0.5Pb0.5)Sr2−xCexCa2Cu3Oywere prepared with x in the range 0 to 0.5, to investigate the role of charge carrier concentration on the superconducting properties of Tl-based materials. The behavior of the normal state resistivity with temperature showed that as x changes from 0 to 0.2, the material moves towards optimally doped state. For higher Ce content the normal state resistivity versus temperature, started deviating from linearity. The onset transition temperature increased gradually by about 6 K as x was increased from 0 to 0.2. The zero resistance transition temperature rapidly decreased for samples with x > 0.2. Furthermore, XRD analysis revealed that Ce enters the structure of both Tl-1223 and Tl1212. These results are discussed in terms of controlling the hole concentration in the CuO2planes through Ce4+replacement of Sr2+.
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页码:1187 / 1191
页数:4
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