Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography

被引：1
|
作者：
D.E. Perea
J.L. Lensch
S.J. May
B.W. Wessels
L.J. Lauhon
机构：
[1] Northwestern University,Department of Materials Science and Engineering
[2] Northwestern University,Materials Research Center
[3] Northwestern University,Department of Electrical Engineering and Computer Science
来源：
Applied Physics A | 2006年 / 85卷
关键词：
Voltage Pulse; Silicon Nanowires; Atom Probe Tomography; Silicon Isotope; Local Electrode Atom Probe;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report the composition analysis of single InAs and Si semiconductor nanowires using pulsed-laser atom probe tomography. The experimental conditions and sample geometries needed to realize 3-D composition mapping are described in detail. InAs mass spectra obtained using voltage pulses and laser pulses are compared, and are found to be superior for pulsed-laser evaporation. The ability to analyze intrinsic Si nanowires using pulsed laser evaporation is demonstrated. No peaks associated with the gold catalyst used were found in the InAs or the Si nanowire mass spectra.
引用
收藏
页码：271 / 275
页数：4
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