Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge

被引：0
|
作者：
N.M. Liao
W. Li
Y.D. Jiang
Y.J. Kuang
K.C. Qi
Z.M. Wu
S.B. Li
机构：
[1] University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices
[2] University of Electronic Science and Technology of China,School of Optoelectronic Information
来源：
Applied Physics A | 2008年 / 91卷
关键词：
Raman Spectrum; Amorphous Silicon; Interior Region; Intermediate Scale; Structural Improvement;
D O I：
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学科分类号：
摘要：
The ordering evolution of the amorphous network of a-Si:H thin films with increasing initial silane-gas temperatures was investigated by Raman spectroscopy. The results show that there exists a gradual ordering of the amorphous network, both in the near surface and interior region on increasing the silane-gas temperature. In addition, the increase in the gas temperature leads to an improved ordering of amorphous network on the short and intermediate scales towards the surface of a-Si:H thin films. Post-annealing at 250 °C for 3 h mainly leads to a short and intermediate range improvement in the interior region of the films. Our present results suggest that a-Si:H thin films with better quality could be deposited at higher silane-gas temperature.
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页码：349 / 352
页数：3
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