Gallium arsenide structures with deep centers and ionized radiation detectors based on them

被引：1
|
作者：
Khludkov S.S. [1 ]
Tolbanov O.P. [1 ]
Budnitskii D.L. [1 ]
机构：
来源：
Russian Physics Journal | 1998年 / 41卷 / 8期
关键词：
GaAs; Deep Center; Nonequilibrium Carrier; Broad Spectral Range; Charge Collection Efficiency;
D O I：
10.1007/BF02510641
中图分类号：
学科分类号：
摘要：
Results of experimental studies of the effect of electromagnetic radiation over a broad spectral range and high-energy charged particles on gallium arsenide structures with deep centers are presented. It is shown that it is possible to create highly sensitive radiation-stable detectors for different forms of radiation on the basis of the structures studied. © 1999 Kluwer Academic/Plenum Publishers.
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页码：768 / 772
页数：4
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