Determining the dielectric characteristics of the Au/C20H12/n-Si (MPS) structure over a wide temperature and voltage

The temperature and voltage effects on dielectric properties (ε′ and ε″), electric modulus (M' and M''), and ac electrical conductivity (σac) of the fabricated Au/C20H12/n-Si (MPS) structures have been investigated in wide temperature range of 200–400 K and voltage (± 3 V) using C/G-V measurements at 500 kHz. The voltage and temperature dependence profile of phase-angle (θ°) were also extracted from the impedance (Z′ and Z′′). All these parameters were found as a function of temperature and voltage in the forward bias region due to the relaxation mechanisms and interface traps located at C20H12/n-Si interface in the bandgap of Si. The characterizations show that main dielectric parameters such as dielectric constant (ε'), dielectric loss (ε''), tangent loss (tanδ), and ac electrical conductivity (σac) increase with increasing temperature, ε'−V and M''−V plots show a peak, and its magnitude and position vary with temperature due to reordering/restructure of traps and polarization under temperature and voltage effects. The Ea value was obtained from the slope of Arrhenius, Ln(σac)-q/kT), plot as 40.8 meV.