A study of ZnGa2O4 phosphor prepared by the solid method

被引:0
|
作者
Kai-Hung Hsu
Mu-Rong Yang
Ko-Shao Chen
机构
[1] Tatung Institute of Technology,Department of Materials Engineering
关键词
Emission Intensity; LiCl; Emission Band; Emission Peak; Spinel Structure;
D O I
暂无
中图分类号
学科分类号
摘要
In this study, the mixtures of ZnO and Ga2O3 powder with addition of LiCl flux were fired, the raw material mixing ratio, doping with Mn2+ and firing atmosphere effects on phosphor characteristics were investigated. When fired at 1200 °C, its phosphor powder emits a broad-band spectrum range between 375 nm to 700 nm, with a peak at 470 nm. The optimal composition of phosphors is about ZnO/Ga2O5=47/53. Manganese-doped ZnGa2O4, fired in air, exhibits two new emission bands with peaks at 506 nm (Mn2+ emission centre) and 666 nm (Mn4+ emission centre). However, if fired under vacuum, the emission spectrum presents only the 506 nm peak with increased intensity. The 666 nm emission peak derived from a little Mn2 oxidized to Mn4+ which substituted Ga3+ to occupy the B sites of the spinel structure. The emission intensity of the 506 nm peak of Zn1-xMnxGa2O4 is strongest when [Mn2+] x=0.006 and decreases markedly as the concentration of Mn2+ exceeds x=0.01. Most of the substitutional Mn2+ doping species in spinel ZnGa2O4 occupy the zinc sites. The luminescent band was associated to the spin-forbidden transition, 4T1(4G)→6A1 (6S). © 1998 Kluwer Academic Publishers
引用
收藏
页码:283 / 288
页数:5
相关论文
共 50 条
  • [21] Improvement of cathodoluminescence for ZnGa2O4 phosphor by second fired process
    Yang, SH
    Yokoyama, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (08): : 5145 - 5150
  • [22] Indium- and tungsten-doped ZnGa2O4 phosphor
    Yang, SH
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (01) : L1 - L4
  • [23] Cathodoluminescence of blue ZnGa2O4 with In2O3-mixed phosphor
    Yang, SH
    Yokoyama, M
    JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (04) : 248 - 252
  • [24] Improvement of cathodoluminescence for ZnGa2O4 phosphor by second fired process
    Natl Cheng Kung Univ, Tainan, Taiwan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 8 (5145-5150):
  • [25] Temperature sensing using a Cr:ZnGa2O4 new phosphor
    Sharma, S. K.
    Glais, E.
    Pellerin, M.
    Chaneac, C.
    Viana, B.
    OXIDE-BASED MATERIALS AND DEVICES VII, 2016, 9749
  • [26] Photoluminescence characteristics of ZnGa2O4 thin films prepared by chemical solution method
    Park, Kyung-Wook
    Yun, Young-Hoon
    Choi, Sung-Churl
    SOLID STATE IONICS, 2006, 177 (19-25) : 1875 - 1878
  • [27] Two emission hands of the ZnGa2O4 phosphors prepared by a heterogeneous precipitation method
    Xu, Zhihua
    Li, Yongxiang
    Liu, Zhifu
    Ge, Wanying
    ASID'04: Proceedings of the 8th Asian Symposium on Information Display, 2004, : 278 - 281
  • [28] Photoluminescence and thermoluminescence properties of ZnGa2O4 prepared by a microwave assisted solid state reaction
    Noto, Luyanda L.
    Mbongo, Mduduzi
    PHYSICA B-CONDENSED MATTER, 2020, 578 (578)
  • [29] Growth and luminescent characteristics of ZnGa2O4 thin film phosphor prepared by radio frequency magnetron sputtering
    Kim, YJ
    Jeong, YH
    Kim, KD
    Kang, SG
    Lee, KG
    Han, JI
    Park, YK
    Cho, KI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1239 - 1243
  • [30] ZnGa2O4:Mn phosphor particles with spherical shape and clean surface
    Roh, HS
    Kang, YC
    Park, SB
    Park, HD
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (7A): : 4559 - 4562