Physical properties of SnS thin films fabricated by hot wall deposition

被引：0
|
作者：
S. A. Bashkirov
V. F. Gremenok
V. A. Ivanov
机构：
[1] National Academy of Sciences of Belarus,Scientific and Practical Materials Research Center
来源：
Semiconductors | 2011年 / 45卷
关键词：
Substrate Temperature; Type Conductivity; Solar Energy Mater; Sulfur Deficiency; Solar Energy Mater Solar Cell;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The dependence of the microstructure and optical properties of SnS thin films fabricated by hot wall deposition onto glass substrates on the deposition conditions is studied. Phase and elemental composition, surface morphology, and transmission spectra of the obtained films are investigated within the wavelength range 400–2500 nm. The single-phase films feature near-stoichiometric elemental composition and a high degree of preferential orientation in the (040) plane. The optical band gap for direct transitions is 1.07–1.27 eV, depending on film thickness.
引用
收藏
页码：749 / 752
页数：3
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