In the growing field of nanotechnology, there is an interest in developing hybrid organic–inorganic devices that have controllable electrical or magnetic properties.1 Because of the nanoscale involved, the surface-to-volume ratio in these devices is large; hence, the devices can be controlled by varying their surface properties. Exerting control by using light is particularly attractive because making conventional hard electric contacts may be difficult due to size and material properties. The work of Suda et al.2 presents a device in which superconductivity is controlled by light through the excitation of a gate made from spiropyran.3Figure 1 schematically presents the device and its mode of operation (right panel) relative to that of a common field effect transistor (left panel). Spiropyran serves as the gate and is reversibly photoisomerized from a nonionic to a zwitterionic form. In its neutral form, no field is applied to the thin single crystal of κ-(BEDT-TTF)2Cu[N(CN)2]Br (κ-Br) (BEDT-TTF: bis(ethylenedithio)tetrathiafulvalene). Upon photoexcitation with UV light, zwitterions are formed in the spiropyran film, and as a result, holes are injected into the κ-Br, converting it to a superconductor at low temperatures. Irradiation with visible light returns the film to its neutral state.Figure 1A schematic that illustrates (on the right) the new photo-activated field effect transistor (FET)-like structure that transforms the κ-Br active layer into a superconductor by the photoisomerization of a spiropyran film that serves as a light-activated gate. A common FET is shown on the left.[graphic not available: see fulltext]
