Determination of the parameters of deep levels in semiconductors using nonstationary spectroscopy and low-frequency noise spectroscopy

被引：0
|
作者：
T. A. Kholomina
机构：
来源：
Measurement Techniques | 1998年 / 41卷
关键词：
Power Spectral Density; Deep Level; Reverse Bias; Barrier Structure; Schottky Diode;
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暂无
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学科分类号：
摘要：
A development of the activation-drift model is obtained. This enables the procedure for determining the parameters of deep levels in semiconductors using the data of nonstationary spectroscopy and low-frequency noise spectroscopy to be made more accurate and increases the reproducibility and reliability of the results of measurements.
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页码：1157 / 1161
页数：4
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