DETERMINATION OF THE PARAMETERS OF DEEP CENTERS IN SEMICONDUCTORS BY DEEP LEVEL TRANSIENT SPECTROSCOPY

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作者：

ZUBKOV, VI

SOLOMONOV, AV

TODOROV, MT

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 09期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1050 / 1051

页数：2

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