Charge transfer magnetoexciton formation at vertically coupled quantum dots

被引:0
|
作者
Willian Gutiérrez
Jairo H Marin
Ilia D Mikhailov
机构
[1] Universidad Industrial de Santander,Escuela de Física
[2] Universidad Nacional de Colombia,Escuela de Física
关键词
Magnetoexciton; Vertically coupled quantum dots; Giant dipolar momentum; Galerkin method; Density of energy states.;
D O I
暂无
中图分类号
学科分类号
摘要
A theoretical investigation is presented on the properties of charge transfer excitons at vertically coupled semiconductor quantum dots in the presence of electric and magnetic fields directed along the growth axis. Such excitons should have two interesting characteristics: an extremely long lifetime and a permanent dipole moment. We show that wave functions and the low-lying energies of charge transfer exciton can be found exactly for a special morphology of quantum dots that provides a parabolic confinement inside the layers. To take into account a difference between confinement potentials of an actual structure and of our exactly solvable model, we use the Galerkin method. The density of energy states is calculated for different InAs/GaAs quantum dots’ dimensions, the separation between layers, and the strength of the electric and magnetic fields. A possibility of a formation of a giant dipolar momentum under external electric field is predicted.
引用
收藏
相关论文
共 50 条
  • [42] Photoreflectance spectroscopy of vertically coupled InGaAs/GaAs double quantum dots
    Sek, G
    Ryczko, K
    Misiewicz, J
    Bayer, M
    Klopf, F
    Reithmaier, JP
    Forchel, A
    SOLID STATE COMMUNICATIONS, 2001, 117 (07) : 401 - 406
  • [43] Tunable exciton relaxation in vertically coupled semiconductor InAs quantum dots
    Wijesundara, Kushal C.
    Rolon, Juan E.
    Ulloa, Sergio E.
    Bracker, Allan S.
    Gammon, Daniel
    Stinaff, Eric A.
    PHYSICAL REVIEW B, 2011, 84 (08):
  • [44] Terahertz-frequency electronic coupling in vertically coupled quantum dots
    Boucaud, P
    Williams, JB
    Gill, KS
    Sherwin, MS
    Schoenfeld, WV
    Petroff, PM
    APPLIED PHYSICS LETTERS, 2000, 77 (26) : 4356 - 4358
  • [46] Exciton localization in vertically and laterally coupled GaN/AlN quantum dots
    Neogi, A
    Morkoç, H
    Kuroda, T
    Tackeuchi, A
    Kawazoe, T
    Ohtsu, M
    NANO LETTERS, 2005, 5 (02) : 213 - 217
  • [47] Spin interactions and switching in vertically tunnel-coupled quantum dots
    Burkard, G
    Seelig, G
    Loss, D
    PHYSICAL REVIEW B, 2000, 62 (04): : 2581 - 2592
  • [48] Enhanced spin and isospin blockade in two vertically coupled quantum dots
    Partoens, B
    Peeters, FM
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1035 - 1036
  • [49] Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix
    Maksimov, MV
    Shernyakov, YM
    Zaitsev, SV
    Gordeev, NY
    Egorov, AY
    Zhukov, AE
    Kopev, PS
    Kosogov, AO
    Sakharov, AV
    Ledentsov, NN
    Ustinov, VM
    Tsatsulnikov, AF
    Alferov, ZI
    Bohrer, J
    Bimberg, D
    SEMICONDUCTORS, 1997, 31 (06) : 571 - 574
  • [50] Effect of a charged impurity on a system of three vertically coupled quantum dots
    Zhang, ZJ
    Qiao, HX
    Li, BW
    PHYSICA B-CONDENSED MATTER, 2003, 325 (1-4) : 333 - 339