Preparation and properties of GaN films on Si(111) substrates

被引：0
|
作者：
Yang Yingge
Ma Honglei
Hao Xiaotao
Ma Jin
Xue Chengshan
Zhuang Huizhao
机构：
[1] Shandong University,School of Physics and Microelectronics
[2] Shandong Normal University,Institute of Semiconductor
来源：
Science in China Series G: Physics, Mechanics and Astronomy | 2003年 / 46卷
关键词：
photoluminescence; gallium nitride films; Si(111);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
High-quality gallium nitride (GaN) films were prepared on Si(111) substrates by sputtering post-an nealing-reaction technique. XRD, XPS, and SEM measurement results indicate that polycrystalline GaN with hexagonal structure was successfully prepared. Intense room-temperature photoluminescence that peaked at 354 nm of the films is observed. The bandgap of these films has a blueshift with respect to bulk GaN.
引用
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页码：173 / 177
页数：4
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