Dislocation Evolution and Microstructural Properties on GaN Grown on Cone Patterned Sapphire Substrate

被引：0
|
作者：
Gui Huanyou Wang
Qiaolai Jin
机构：
[1] Academy of Electronic Information and Electrical Engineering,
[2] Xiangnan University,undefined
[3] School of Information and Optoelectronics Science and Technology,undefined
[4] South China Normal University,undefined
[5] Institute of Physics and Information Science,undefined
[6] Hunan Normal University,undefined
来源：
Russian Journal of Physical Chemistry A | 2018年 / 92卷
关键词：
GaN; patterned sapphire substrate; threading dislocation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：1567 / 1571
页数：4
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