GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

被引：3
|
作者：
Siming Chen
Wei Li
Ziyang Zhang
David Childs
Kejia Zhou
Jonathan Orchard
Ken Kennedy
Maxime Hugues
Edmund Clarke
Ian Ross
Osamu Wada
Richard Hogg
机构：
[1] University of Sheffield,Department of Electronic and Electrical Engineering
[2] University of Sheffield,Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, EPSRC National Centre for III
[3] Kobe University,V Technology
来源：
Nanoscale Research Letters | 2015年 / 10卷
关键词：
Superluminescent Light-Emitting Diode; Quantum well; Quantum dot;
D O I：
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中图分类号：
学科分类号：
摘要：
A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature.
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