Modeling of diffusion mass transfer of implanted dopants in silicon. I. Formulation of the model

被引：0

作者：

Khina B.B. ^{[1
]}

机构：

[1] Physicotechnical Institute, National Academy of Sciences of Belarus, Minsk 220141

来源：

J. Eng. Phys. Thermophys. | 2007年 / 5卷 / 847-856期

关键词：

Charge State; Point Defect; Interstitial Atom; Dopant Atom; Bimolecular Reaction;

D O I：

10.1007/s10891-007-0114-9

中图分类号：

学科分类号：

摘要：

A generalized model of diffusion mass transfer of implanted dopant atoms (donors and acceptors) in crystalline silicon has been developed. It takes into account all possible charge states of diffusing species (vacancies, interstitial Si atoms, and "dopant atom-vacancy" and "dopant atom-interstitial silicon atom" pairs) and the difference between the diffusion coefficients of differently charged pairs. Expressions for the source/sink terms are derived which describe all bimolecular reactions between the species (generation and annihilation) in the course of diffusion with account for their charges. © 2007 Springer Science+Business Media, Inc.

引用

页码：847 / 856

页数：9

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