Modeling of diffusion mass transfer of implanted dopants in silicon. I. Formulation of the model

A generalized model of diffusion mass transfer of implanted dopant atoms (donors and acceptors) in crystalline silicon has been developed. It takes into account all possible charge states of diffusing species (vacancies, interstitial Si atoms, and "dopant atom-vacancy" and "dopant atom-interstitial silicon atom" pairs) and the difference between the diffusion coefficients of differently charged pairs. Expressions for the source/sink terms are derived which describe all bimolecular reactions between the species (generation and annihilation) in the course of diffusion with account for their charges. © 2007 Springer Science+Business Media, Inc.