Criterion for identification of ferroelectric domains in TGS crystals from AFM images

Criteria for identification of actual (dynamic) domains and morphologically similar domain “memory” regions are proposed based on the study of various types of contrast of topographic atomic-force microscopy images of lenslike regions on the polar surface of TGS crystals. Inaccuracy in identification may result in further errors in estimating the parameters of the domain structure. The images of ferroelectric domains in the spreading-resistance mode that indicate directly the presence of conductive properties of the domain walls have been obtained for the first time.