Pressure-induced tuning of lattice distortion in a high-entropy oxide

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作者
Benyuan Cheng
Hongbo Lou
Abhishek Sarkar
Zhidan Zeng
Fei Zhang
Xiehang Chen
Lijie Tan
Vitali Prakapenka
Eran Greenberg
Jianguo Wen
Ruzica Djenadic
Horst Hahn
Qiaoshi Zeng
机构
[1] Center for High Pressure Science and Technology Advanced Research,Institute of Nanotechnology
[2] Shanghai Institute of Laser Plasma,State Key Laboratory for Advanced Metals and Materials
[3] Joint Research Laboratory Nanomaterials–Technische Universität Darmstadt and Karlsruhe Institute of Technology,Center for Advanced Radiation Sources
[4] Karlsruhe Institute of Technology,Center for Nanoscale Materials
[5] University of Science and Technology Beijing,Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering
[6] University of Chicago,undefined
[7] Argonne National Laboratory,undefined
[8] Southeast University,undefined
[9] Heraeus Deutschland GmbH & Co. KG,undefined
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摘要
As a new class of multi-principal component oxides with high chemical disorder, high-entropy oxides (HEOs) have attracted much attention. The stability and tunability of their structure and properties are of great interest and importance, but remain unclear. By using in situ synchrotron radiation X-ray diffraction, Raman spectroscopy, ultraviolet–visible absorption spectroscopy, and ex situ high-resolution transmission electron microscopy, here we show the existence of lattice distortion in the crystalline (Ce0.2La0.2Pr0.2Sm0.2Y0.2)O2−δ HEO according to the deviation of bond angles from the ideal values, and discover a pressure-induced continuous tuning of lattice distortion (bond angles) and band gap. As continuous bending of bond angles, pressure eventually induces breakdown of the long-range connectivity of lattice and causes amorphization. The amorphous state can be partially recovered upon decompression, forming glass–nanoceramic composite HEO. These results reveal the unexpected flexibility of the structure and properties of HEOs, which could promote the fundamental understanding and applications of HEOs.
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