Performance Analysis of GaN/AlGaN/AlN/GaN MIS-MODFETs with High-κ as Gate Dielectric Insulator Layer

In this work, the impact of high-κ permittivity gate dielectric materials on electrical performance of GaN MODFETs has been studied by using Matlab and Atlas-TCAD. A rigorous comparative analysis of the proposed ZrO2 oxide based GaN MIS-MODFETs with Conv. MODFETs and HfO2 based MIS-MODFETs have been performed. A two dimensional (2D) calibrated simulation studies have shown that the use ZrO2 based MIS-MODFETs significantly outperforms the Conv. MODFETs and HfO2 based MIS-MODFETs in most of the performance measuring parameters. Thus, excellent dielectric for insulator materials properties such as high-κ permittivity and higher output device performance is investigated. The simulation results indicated that the use of ZrO2 high-κ as gate dielectric material could improve the output performance in terms of drain current and the calibrated simulation results are affirmed with those of the experience existing in the literature and shown that the use ZrO2 could improve also the interfacial quality and ensure high thermal stability of the gate dielectric layer in Conv. MODFETs for efficient power switching applications.