The influence of sinks of intrinsic point defects on phosphorus diffusion in Si

The influence of sinks associated with structural defects is analyzed qualitatively based on the model of P diffusion in Si by the dual pair mechanism. It is demonstrated that the allowance made for sinks of self-interstitials leads to the retardation of the enhanced P diffusion for the low-content region in the tail of the concentration profile. The influence of sinks is most pronounced if the position of their peak concentration is in the region of the peak of generation of self-interstitials inside the diffusion layer. From a comparison of the result of calculations with the experimental data, the parameters of the capture of self-interstitials by structural defects, which are introduced by the P diffusion and implantation of electrically inactive Ge and N impurities, are determined.