The influence of ∑3 twin boundaries on the formation of radiation-induced defect clusters in nanotwinned Cu

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作者
Michael J. Demkowicz
Osman Anderoglu
Xinghang Zhang
Amit Misra
机构
[1] Massachusetts Institute of Technology,Department of Materials Science and Engineering
[2] Texas A&M University,Department of Mechanical Engineering, Materials Science and Engineering Program
[3] Los Alamos National Laboratory,MPA
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We investigate the collective effect of a high volume fraction of ∑3 twin boundaries on the response of nanotwinned Cu to high dose He implantation near room temperature and find that they do not curtail the formation of vacancy and interstitial clusters. This result is rationalized through atomistic modeling, which shows that point defects at these boundaries have nearly identical properties to those in pure fcc Cu.
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页码:1666 / 1675
页数:9
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