Direct conversion of β-decay energy into electrical energy

被引：0

作者：

Bulyarskii S.V. ^{[1
]}

Lakalin A.V. ^{[1
]}

Abanin I.E. ^{[2
]}

Amelichev V.V. ^{[2
]}

Risovanyi V.D. ^{[3
]}

Svetukhin V.V. ^{[4
]}

Ivanov B.V. ^{[5
]}

Lisina I.G. ^{[5
]}

机构：

[1] Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow

[2] Scientific-Manufacturing Complex Technological Center MIET, Zelenograd, Moscow

[3] JSC Science and Innovations, Moscow

[4] Ulyanovsk State University, Ulyanovsk

[5] High-Technological Scientific-Research Institute of Inorganic Materials, Moscow

来源：

Russian Microelectronics | 2017年 / 46卷 / 1期

关键词：

D O I：

10.1134/S1063739717010024

中图分类号：

学科分类号：

摘要：

A comparison of the efficiencies of the power supplies produced based on the β-radiation sources has been carried out. The factors decreasing the efficiency of the device have been revealed. The results of the experimental studies and calculations of the efficiency of the direct energy conversion of Ni-63 β-radiation into electrical energy using silicon p–i–n diodes are presented. An expression for the open-circuit voltage of the convertor taking into account the distribution of high-energy electrons in the space charge region (SCR) of the p–i–n diode has been obtained. The ways of optimizing the convertor’s parameters due to improvements in the diode production technology and optimization of the thicknesses of the active emitter layer and i-region of the semiconductor convertor have been indicated. © 2017, Pleiades Publishing, Ltd.

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页码：18 / 25

页数：7

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