Design and development of a piezoresistive pressure sensor on micromachined silicon for high-temperature applications and of a signal-conditioning electronic circuit

被引：0

作者：

D. Crescini

V. Ferrari

Z. K. Vajna

D. Marioli

A. Taroni

A. Borgese

M. Marinelli

E. Milani

A. Paoletti

A. Tucciarone

G. Verona-Rinati

机构：

[1] Facoltà di Ingegneria,Dipartimento di Elettronica per l'Automazione and INFM

[2] Università di Brescia,undefined

[3] Gefran Sensori,undefined

[4] Università di Roma,undefined

来源：

Microsystem Technologies | 2003年 / 9卷

关键词：

Silicon; Silicon Substrate; Pressure Sensor; Microstructural Characteristic; Electronic Circuit;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The deposition of diamond films on silicon substrate by MWPECVD is described and microstructural characteristics of the obtained films are reported. The resistive and piezoresistive properties of the diamond-on-silicon films have been measured beyond 200 °C by means of a purposely developed apparatus, and experimental results are reported. The piezoresistive properties at high temperature are exploited in the development of a micromachined pressure sensor capable of operating at up to 350–380 °C. A dedicated signal-conditioning electronic circuit is being designed and its functioning principle is here described.

引用

页码：431 / 435

页数：4

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