Investigation of strained InxGa1−xAs/InP quantum wells fabricated by metalorganic compound hydride epitaxy

被引：0
|
作者：
A. D. Bondarev
D. A. Vinokurov
V. A. Kapitonov
O. V. Kovalenkov
Z. N. Sokolova
I. S. Tarasov
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 1998年 / 24卷
关键词：
Indium; Hydride; Compressive Stress; Laser Diode; Environmental Monitoring;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An investigation was made of the possibility of using reduced-pressure MOC hydride epitaxy to fabricate highly strained (compressive stress) InxGa1−xAs/In0.53Ga0.47As quantum wells on indium phosphide (100) substrates. The photoluminescence properties of these heterostructures were investigated. It was shown that these heterostructures are potentially useful for laser diodes emitting in the 1.5–2 μm range, which is important for environmental monitoring.
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页码：886 / 887
页数：1
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