Whole-wafer fabrication process for three-terminal double stacked tunnel junctions

被引：0

作者：

G.P. Pepe

G. Peluso

R. Scaldaferri

L. Parlato

C. Granata

E. Esposito

M. Russo

机构：

[1] Dipartimento Scienze Fisiche,

[2] Università di Napoli “Federico II”,undefined

[3] P.le Tecchio 80,undefined

[4] 80125 Napoli,undefined

[5] Italy,undefined

[6] INFM,undefined

[7] UdR di Napoli,undefined

[8] Piazzale Tecchio 80,undefined

[9] 80125 Napoli,undefined

[10] Italy,undefined

[11] Dipartimento Ingegneria dell'Informazione,undefined

[12] Seconda Università di Napoli,undefined

[13] Via Roma 29,undefined

[14] 81031 Aversa (CE),undefined

[15] Italy,undefined

[16] Istituto di Cibernetica del CNR,undefined

[17] Via Toiano 6,undefined

[18] 80078 Arco Felice,undefined

[19] Napoli,undefined

[20] Italy,undefined

来源：

The European Physical Journal B - Condensed Matter and Complex Systems | 2001年 / 23卷

关键词：

PACS. 74.50.+r Proximity effects, weak links, tunneling phenomena, and Josephson effects – 85.25.Am Superconducting device characterization, design, and modeling;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A new fabrication process for three-terminal superconducting devices consisting of two Josephson junctions in a stacked configuration is reported. The process is based on the deposition of the whole Nb/AlxOy/Nb-Al/AlxOy/Nb multilayer on a Si crystalline wafer without any vacuum breaking. Lift-off techniques, anodization processes and a SiO film deposition have been adopted for patterning and insulating the two tunnel stacked junctions. Devices have been characterized in terms of current-voltage (I-V) curves and Josephson critical current vs. the externally applied magnetic field. They show high quality factors (Vm values up to 65 mV at 4.2 K), and good current uniformity.

引用

页码：421 / 425

页数：4

共 50 条

[1] Whole-wafer fabrication process for three-terminal double stacked tunnel junctions
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Peluso, G
Scaldaferri, R
Parlato, L
Granata, C
Esposito, E
Russo, M
[J]. EUROPEAN PHYSICAL JOURNAL B, 2001, 23 (04): : 421 - 425
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